?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt june 2006 FGA180N30D 300v pdp igbt features ? high current capability ? low saturation voltage: v ce(sat), typ = 1.1 v@ i c = 40a ? high input impedance description employing unified igbt tech nology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for pdp applications where low condution loss is essential. notes: (1) repetitive test , pulse width = 100usec , duty = 0. 2 * ic_pulse limited by max tj thermal characteristics g c e g c e g c e to-3p n symbol description FGA180N30D units v ces collector-emitter voltage 300 v v ges gate-emitter voltage 30 v i c collector current @ t c = 25 c 180 a i cm pulsed collector current (note 1) @ t c = 25 c 450 a i f diode continuous forward current @ t c = 100 c1 0 a i fm diode maximum forward current 40 a p d maximum power dissipation @ t c = 25 c 480 w maximum power dissipation @ t c = 100 c 192 w t j operating junction temperature -55 to +150 c t stg storage temperature range 300 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc thermal resistance, junction-to-case for igbt -- 0.26 c/w r jc thermal resistance, junction-to-case for diode -- 1.56 c/w r ja thermal resistance, junction-to-ambient -- 40 c/w absolute maximum rating tc = 25oc unless otherwise noted
2 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGA180N30D FGA180N30D to-3p n -- -- 30 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250 a 300 -- -- v ? bv ces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a- -0 . 6- - v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 100 a i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 2.5 4.0 5.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -- 1.1 1.4 v i c = 180a , v ge = 15v, t c = 25 c -- 1.9 -- v i c = 180a , v ge = 15v, t c = 125 c -- 2.0 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 3420 -- pf c oes output capacitance -- 520 -- pf c res reverse transfer capacitance -- 150 -- pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 40a, r g = 5 ? , v ge = 15v, resistive load, t c = 25 c -- 30 -- ns t r rise time -- 210 -- ns t d(off) turn-off delay time -- 100 -- ns t f fall time -- 140 300 ns e on turn-on switching loss -- 0.26 -- mj e off turn-off switching loss -- 0.75 -- mj e ts total switching loss -- 1.01 -- mj t d(on) turn-on delay time v cc = 200v, i c = 40a, r g = 5 ? , v ge = 15v, resistive load, t c = 125 c -- 30 -- ns t r rise time -- 230 -- ns t d(off) turn-off delay time -- 110 -- ns t f fall time -- 220 -- ns e on turn-on switching loss -- 0.27 -- mj e off turn-off switching loss -- 1.0 -- mj e ts total switching loss -- 1.27 -- mj q g total gate charge v ce = 200v, i c = 40a, v ge = 15v -- 185 277 nc q ge gate-emitter charge -- 24 36 nc q gc gate-collector charge -- 88 132 nc
3 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt electrical characteristics of diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 10a t c = 25 c--1.11.4v t c = 125 c--0.9-- t rr diode reverse recovery time i f = 10a di/dt = 200a/ s t c = 25 c--21--ns t c = 125 c--35-- i rr diode peak reverse recovery cur- rent t c = 25 c--2.8-- a t c = 125 c--5.6-- q rr diode reverse recovery charge t c = 25 c -- 29.4 -- nc t c = 125 c--98--
4 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt typical performance characteristics typical saturation voltagecharacteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. saturation voltage figure 4. transfer characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs.v ge temperature at variant current level 0246 0 50 100 150 200 250 300 12v t c = 125 o c 20v 15v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 50 100 150 200 250 300 12v t c = 25 o c 20v 15v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 150 180 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 46810 1 10 100 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage, v ge [v] 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 180a 90a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 0 4 8 12 16 20 0 1 2 3 4 5 6 180a i c = 20a 40a 90a common emitter t c = 25 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
5 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt typical performance characteristics (continued) figure 7. saturation voltage vs.v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn off characteristics vs. gate resistance gate resistance 0 4 8 12 16 20 0 1 2 3 4 5 6 180a i c = 20a 40a 90a common emitter t c = 125 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 2000 4000 6000 8000 common emitter v ge = 0v, f = 1mhz t c = 25 o c cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 50 100 150 200 250 0 2 4 6 8 10 12 14 common emitter r l = 5 ? t c = 25 o c vcc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 15 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 s 100 s dc operation 1ms ic max (continuous) ic max (pulsed) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] 600 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c td(on) tr switching time [ns] gate resistance, r g [ ? ] 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c td(off) tf switching time [ns] gate resistance, r g [ ? ] 2000
6 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt typical performance characteristics (continued) figure 13. turn-on characteristics vs. figure 14. turn-off characteristics collector current vs. collector current figure 15. switching loss vs gate resistance figure 16. switching loss vs collector current figure 17. turn off soa characteristics 0 20 40 60 80 100 120 140 160 180 10 100 1000 common emitter v cc = 200v v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c tr td(on) switching time [ns] collector current, i c [a] 0 20 40 60 80 100 120 140 160 180 10 100 1000 common emitter v cc = 200v v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c td(off) tf switching time [ns] collector current, i c [a] 0 20 40 60 80 100 120 140 160 180 0.1 1 10 common emitter v cc =200v v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c eon eoff switching loss [mj] collector current, i c [a] 0 1020304050 0.1 1 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c eon eoff switching loss [mj] gate resistance, r g [ ? ] 1 10 100 1 10 100 1000 safe operating area v ge = 20v, t c = 100 o c collector current, i c [a] collector-emitter voltage, v ce [v] 500
7 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt typical performance characteristics (continued) figure 18. transient thermal impedance of igbt figure 19. forward characteristics figure 20. typical reverse recovery current figure 21. typical reverse recovery time 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 t c = 25 o c t c = 125 o c t j = 125 o c t j = 25 o c forward current , i f [a] forward voltage , v f [v] 100 500 0 1 2 3 4 5 i f = 10a t c = 25 o c reverse recovery current , i rr [a] di/dt [a/ s] 100 500 24 28 32 36 i f = 10a tc = 25 o c reverse recovery time , t rr [ns] di/dt [a/ s] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
8 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt mechanical dimensions dimensions in millimeters to-3pn
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 9 www.fairchildsemi.com FGA180N30D rev. b FGA180N30D 300v pdp igbt disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reli ability, function or design. fai rchild does not assume any liability arising out of the application or use of any pr oduct or circuit described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. these specifications do not expand the terms of fairchild?s worldwide terms a nd conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose fail ure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains th e design specifications for product development. specifications may change in any manner without notice. preliminary first production this data sheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i19 fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop?
|
